Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1985-04-01
1986-08-12
Roy, Upendra
Metal working
Method of mechanical manufacture
Assembling or joining
29571, 29577C, 148 15, 148187, 148DIG82, 357 42, 357 43, 357 91, H01L 2122, H01L 21265
Patent
active
046047905
ABSTRACT:
An improved method is disclosed for isolating active devices in an integrated circuit structure containing both CMOS and bipolar devices to simultaneously form isolation regions to separate CMOS channels from adjacent channels or bipolar devices as well as to separate adjacent bipolar devices from one another. The improved method of isolation also results in the simultaneous formation of a retrograde p-well for the n-channel device. The improved method comprises implanting, into a substrate having field oxide portions previously grown thereon, impurities capable of forming one or more isolation regions, between the active devices, at an energy level sufficiently high to permit penetration of the impurities through the field oxide.
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patent: 4362574 (1982-12-01), Gevondyan
patent: 4411058 (1983-10-01), Chen
patent: 4468852 (1984-09-01), Cerofolini
patent: 4484388 (1984-11-01), Iwasaki
patent: 4509991 (1985-04-01), Taur
patent: 4535532 (1985-08-01), Lancaster
Combs IEEE-IEDM (1981) p. 346.
Advanced Micro Devices , Inc.
King Patrick T.
Roy Upendra
Taylor John P.
Tortolano J. Vincent
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