Integrated circuit fabrication with interlevel dielectric

Details Integrated circuit fabrication with interlevel dielectric Integrated circuit fabrication with interlevel dielectric

1994-12-29

1996-09-24

Quach, T. N.

Fishing, trapping, and vermin destroying

437195, 437240, 437978, H01L 2131

Patent

active

055590527

ABSTRACT:
An interlevel dielectric comprised of phosphorus-doped glass surrounding the second polysilicon level of an SRAM cell is disclosed. The second polysilicon is generally a cell local interconnect. The phosphorus-doped glass layer efficiently getters sodium from underlying layers. The phosphorus-doped glass layer is utilized although another doped gettering layer may be used at a higher level of the circuit.

REFERENCES:
patent: 4589928 (1986-05-01), Dalton et al.
patent: 4731346 (1988-03-01), Ashwell

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