P-MOSFETS with enhanced anomalous narrow channel effect

Details P-MOSFETS with enhanced anomalous narrow channel effect P-MOSFETS with enhanced anomalous narrow channel effect

1994-06-30

1996-09-24

Wilczewski, Mary

Fishing, trapping, and vermin destroying

H01L 21265

Patent

active

055590500

ABSTRACT:
An anomalous threshold voltage dependence on channel width measured on 0.25 .mu.m ground rule generation trench-isolated buried-channel p-MOSFETs is used to enhance circuit performance. As the channel width is reduced, the magnitude of the threshold voltage first decreases before the onset of the expected sharp rise in V.sub.t for widths narrower than 0.4 .mu.m. Modeling shows that a "boron puddle" is created near the trench bounded edge as a result of transient enhanced diffusion (TED) during the gate oxidation step, which imposes a penalty on the off-current of narrow devices. TED is governed by interstitials produced by a deep phosphorus implant, used for latchup suppression, diffusing towards the trench sidewall and top surface of the device.

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Mandelman, J. A., et al., "Anomalous Narrow Channel Effect in Trench-Isolated Buried-Channel P-MOSFET's", IEEE Electron Device Letters, Dec. 1994, vol. 15, No. 12, pp. 496-498.
Coppee, J. L., et al., "Narrow Channel Efect on n- and p-Channel Devices Fabricated with the Silo and Box Isolation Techniques", 18th European Solid State Device Research Conference, Montpellier, France, 13-16 Sep. 1988, Journal De Physique Colloque, vol. 49, No. C-4, pp. 749-752.

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