Ion beam materials processing system with neutralization means a

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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2041921, H01J 3730

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active

047315407

ABSTRACT:
An ion beam processing system for etching or sputtering includes a voltage source for applying an extraction voltage between a beam neutralizing filament and a specimen mount target for improved ion beam neutralization efficiency and reduced contamination.

REFERENCES:
patent: 4278890 (1981-07-01), Gruen et al.
patent: 4351712 (1982-09-01), Cuomo et al.
patent: 4399016 (1983-08-01), Tsukada et al.
L. D. Bollinger, "Ion Beam Etching with Reactive Gases", Jan. 1983, Solid State Technology, 99-105.
R. A. Powell et al. "Dry Etching for Microelectronics", Verlag, North Holland, Physics Publishing (1984), pp. 120 and 137.
R. Powell et al., "Reactive Ion Beam Etching", Dry Etching for Microelectronics, North-Holland Phys. Publ., 1984, pp. 118-129, 136-137, 182-191.

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