IC interconnect system using metal as a mask

Details IC interconnect system using metal as a mask IC interconnect system using metal as a mask

1985-07-11

1987-08-25

James, Andrew J.

357 40, 357 41, 357 65, H01L 2348, H01L 2944, H01L 2952, H01L 2960

Patent

active

046896570

ABSTRACT:
During the manufacture of semi-custom monolithic integrated circuits or semiconductor devices silicon wafers with P-type or N-type impurity regions are used and interconnections must be produced for specific applications. Unlike currently known technologies, an electrically conductive film containing standardized openings in a pre-arranged raster is deposited on the silicon wafer. Subsequently, the conductive film is removed between preselected openings directly or indirectly by means of electromagnetic radiation in order to produce the required circuit configuration. A laser beam is particularly appropriate therefor because such beam can be positioned and controlled and can be used directly for the exposure of a photosensitive film. The production of isolated conductive areas in the conductive film is then accomplished by photo-etching. The use of an expensive customer specific photomask can thus be avoided. In the thus obtained semiconductor device the conductive film contains a regular arrangement of openings which form the ends, sides or corners of isolated conductive areas.

REFERENCES:
patent: 3304594 (1967-02-01), Madland
patent: 4000502 (1976-12-01), Butler et al.
patent: 4161662 (1979-07-01), Malcolm et al.
patent: 4500906 (1985-02-01), Ohno et al.
patent: 4644382 (1987-02-01), Charransol et al.
patent: 4649413 (1987-03-01), Kelly
"Lasarray Direct--Write--Laser DWL", Lasarray Corporation, 191 Lunar Drive, Scotts Valley, Calif. 95066, Jun. 1, 1987, pp. 1-6.
"SPIE's 1987 Santa Clara Symposium on Microlithography, Advance Program", Mar. 1-6, 1987, The Int'l Soc. For Optical Engineering, pp. 1-15.
Fitzgibbons et al., "A Direct Write Laser Pattern Generator for Rapid Semiconductor Device Customization", SPIE's Santa Clara Symposium on Microlithography, Mar. 1-6, 1987.

Affiliated with

Also associated with

Rating

IC interconnect system using metal as a mask does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with IC interconnect system using metal as a mask, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and IC interconnect system using metal as a mask will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1926626