Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1988-06-13

1990-01-30

Clawson, Jr., Joseph E.

357 51, 357 41, H01L 2978, H01L 2702

Patent

active

048977004

ABSTRACT:
A dynamic memory device of one-transistor memory cell type is disclosed. A thick insulating layer is formed on the transistor and an aperture is provided in the thick insulating layer to reach the source or drain region of the transistor. A MOS type storage capacitor is formed within the aperture and above the upper surface of the insulating layer such that the capacitance of the capacitor within the aperture becomes larger than the capacitance of the capacitor above the upper surface of the insulating layer.

REFERENCES:
patent: 4419743 (1983-12-01), Taguchi et al.

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