Method of making a bipolar transistor with polycrystalline conta

Details Method of making a bipolar transistor with polycrystalline conta Method of making a bipolar transistor with polycrystalline conta

1986-12-11

1987-12-01

Hearn, Brian E.

Fishing, trapping, and vermin destroying

156653, 156657, 437162, 437193, H01L 2128

Patent

active

047094699

ABSTRACT:
Disclosed herein is a semiconductor device manufacturing process applicable to a bipolar semiconductor integrated circuit device in which a base electrode (9) is directly extracted from an active base region (61) through a superposed layer of a polysilicon film (601) and a metal silicide film (501) while an emitter electrode (10) is partially formed by a polysilicon film (602) and a contact hole is defined to form a base metal silicide film with the polysilicon film being employed as a mask. Consequently, the distance between an emitter layer (71) and a base electrode hole (50) is reduced without necessity of including margins of emitter and base electrode wires extending over respective holes in the said distance.

REFERENCES:
patent: 4445268 (1984-05-01), Hirao
Article: "Subnanosecond Self-Aligned 1.sup.2 L/MTL Circuits", D. D. Tang et al, IEEE Transactions on Electron Devices, vol. ED-27, No. 8, Aug. 1980, pp. 1379-1384.

Affiliated with

Also associated with

Rating

Method of making a bipolar transistor with polycrystalline conta does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a bipolar transistor with polycrystalline conta, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a bipolar transistor with polycrystalline conta will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1924038