Method of manufacturing semiconductor device isolation

Details Method of manufacturing semiconductor device isolation Method of manufacturing semiconductor device isolation

1989-04-24

1990-01-30

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 70, 437 72, H01L 2176, H01L 21302

Patent

active

048973637

ABSTRACT:
In a method of manufacturing a semiconductor device according to the present invention, regions of first conductivity type buried layers formed on a first conductivity type substrate are retracted with respect to regions of second conductivity type buried layers. Thus, in formation of second conductivity type epitaxial layer, first conductivity type impurity contained in the first conductivity type buried layers is prevented from floating diffusion up to element regions of the second conductivity type epitaxial layers. At the same time, the semiconductor device can be implemented with high density of integration.

REFERENCES:
patent: 4381956 (1983-05-01), Lane
patent: 4434543 (1984-03-01), Schwabe et al.
patent: 4694562 (1987-09-01), Iwasaki et al.

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