Method of restoring Si crystal lattice order after neutron irrad

Details Method of restoring Si crystal lattice order after neutron irrad Method of restoring Si crystal lattice order after neutron irrad

1979-03-19

1981-07-07

Behrend, Harvey E.

G21G 106

Patent

active

042773075

ABSTRACT:
Si crystal lattice damage caused by neutron irradiation in homogeneously doping Si crystals with p.sup.31 is removed by an annealing process wherein the minimum temperature is adjusted in accordance with the make-up of the irradiation flux utilized during neutron irradiation and in accordance with the carbon concentration within the irradiated Si crystal.

REFERENCES:
patent: 3076732 (1963-02-01), Tanenbaum
patent: 3967982 (1976-07-01), Arndt et al.
patent: 4042454 (1977-08-01), Haas et al.
IEEE Trans. on Electron Devices vol. ED-23, No. 8, 8/76, pp. 797-802, Janus et al.
J. of Electrochemical Soc. Feb., 1961, pp. 171-176, vol. 108, No. 2, Tanenbaum et al.
J. of Applied Physics vol. 41, No. 6, 5/70, pp. 2607-2635, Cheng et al.

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