Conductively enclosed hybrid integrated circuit assembly using a

Details Conductively enclosed hybrid integrated circuit assembly using a Conductively enclosed hybrid integrated circuit assembly using a

1990-09-10

1991-09-17

Hille, Rolf

357 75, 357 80, 357 81, H01L 2312, H01L 2314, H01L 2306, H01L 2310

Patent

active

050499785

ABSTRACT:
A conductively enclosed hybrid integrated circuit assembly for use with microwave and millimeter wave signals is disclosed. The enclosure utilizes a silicon substrate into which recesses are formed by conventional silicon etching processes to support individual MMIC chips with their surfaces flush with the unetched substrate surfaces. The assembly is covered with a thin solid dielectric layer, perforated over points of connection and followed by a metallization to provide point-to-point connections. The arrangement provides one or more levels of patterned metallizations with additional levels being provided either by additional dielectric layers or by forming the silicon substrate from three or more laminar elements and providing a patterned metallization on the surface of an intermediate element. Efficiency in signal grounding and in rf transmission line paths is assured by surface metallizations and the provision of low impedance paths through the substrate. Fully hermetic seals are provided using conventional silicon processing. Input/Output connections may be either electrical or optical.

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