Process of producing semiconductor devices

Details Process of producing semiconductor devices Process of producing semiconductor devices

1974-05-06

1976-08-03

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29583, 357 56, 357 89, B01J 1700

Patent

active

039721132

ABSTRACT:
Boron is diffused into selected areas of each main face of an N silicon substrate and gallium is diffused into the entire main face to form a P-N junction including deeper portions alternating shallower portion. Selective etching is effected to form grooves in the shallower junction portions for dividing the P-N junction. Both main faces of the substrate except for the grooves are metallized and a passivation layer is applied to each groove. Alternatively, in order to form the P-N junction as above described, gallium is selectively diffused in the substrate followed by a further diffusion of the gallium.

REFERENCES:
patent: 3172785 (1965-03-01), Jochems
patent: 3257589 (1966-06-01), Belasco
patent: 3535774 (1970-10-01), Baker
patent: 3608186 (1971-09-01), Hutson

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