Monolithic temperature sensing device

Details Monolithic temperature sensing device Monolithic temperature sensing device

1989-01-10

1991-09-17

James, Andrew J.

357 234, 357 238, 357 20, 357 41, H01L 2358

Patent

active

050499610

ABSTRACT:
A semiconductor diode monolithically integrated onto a power MOS transistor or power IGBT for temperature sensing. With the application of a positive bias and a constant current, the diode provides a voltage that varies linearly as a function of temperature for the power transistor. The diode is constructed in such a manner so as to prevent latch-up (i.e. where a parasite silicon controlled rectifiers is turned on, locking the power transistor in an on condition) and voltage breakdown (i.e. where the diode malfunctions from excessive voltage).

REFERENCES:
patent: 4602266 (1986-07-01), Coe
patent: 4672407 (1987-06-01), Nakagawa
patent: 4833509 (1989-05-01), Hickox et al.
patent: 4896196 (1990-01-01), Blanchard et al.
patent: 4896199 (1990-01-01), Tsuzuki et al.
"Applications of Analog Integrated Circuits", Soclof, S., Prentice Hall (1985), pp. 273-284.
Pending patent application serial No. 223,059, filed Jul. 22, 1988, titled "High Power Transistor with Voltage, Current, Power, Resistance, and Temperature Sensing Capability", Inventor: Nathan Zommer.
"An Improved MOS Insulated Gate Transistor that Handles 800V, 50A", Nathan Zommer, Gene Chen, and Dr. Mark Barron, PCIM, Jan. 1987, pp. 24-30.

Affiliated with

Also associated with

Rating

Monolithic temperature sensing device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Monolithic temperature sensing device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Monolithic temperature sensing device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1920625