Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

1990-05-21

1991-09-17

Prenty, Mark

357 55, 357 51, H01L 2968, H01L 2906, H01L 2702

Patent

active

050499599

ABSTRACT:
A semiconductor integrated circuit device having at least one capacitor comprises a first semiconductor layer (9) having a relatively high impurity concentration and a second semiconductor layer (10) formed on said first semiconductor layer and having a relatively low impurity concentration of the same conductivity type as that of said first semiconductor layer. The capacitor is formed with a groove (15) extending at least up to an interface between the first semiconductor layer (9) and the second semiconductor layer (10) and the capacitor electrode (5) extends along the groove (15), so that a storage capacitance of the capacitor can be increased.

REFERENCES:
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patent: 4441246 (1984-04-01), Redwine
patent: 4688063 (1987-08-01), Lu et al.
patent: 4792834 (1988-12-01), Uchida
Electronics, vol. 54, #13, pp. 103-105, by Rao, Jun. 30, 1981.
Sze, Physics of Semiconductor Devices, 1981, p. 32.
H. H. Chao et al., IBM Technical Disclosure Bulletin, vol. 26, No. 5 (10/83).
P. F. Landler, IBM Technical Disclosure Bulletin, vol. 17, No. 11 (4/75).
IBM Technical Disclosure Bulletin, vol. 26, No. 9, Feb. 1984, "Trench Node One-Device Memory Cell Process", by B. El-Kareh et al., pp. 4699-4701.

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