Schottky tunnel transistor device

Details Schottky tunnel transistor device Schottky tunnel transistor device

1990-01-18

1991-09-17

James, Andrew J.

357 234, 357 41, 357 52, 357 86, H01L 2948, H01L 2910, H01L 2702, H01L 2934

Patent

active

050499530

ABSTRACT:
A semiconductor device includes a semiconductor substrate of a first conductivity type, in which a drain region is formed in the substrate, and a gate electrode is formed on the surface of the substrate via an insulating film formed thereon. A Schottky metal as a source region is formed in the surface of the substrate away from the drain region, the Schottky metal and the substrate constituting a Schottky junction at an interface therebetween near the gate electrode. A shield layer of a second conductivity type is interposed between the Schottky metal and the substrate except in the Schottky junction. The gate electrode controls tunnel current at the Schottky junction.

REFERENCES:
patent: 4631563 (1986-12-01), Iizuka
patent: 4823172 (1989-04-01), Mihara
patent: 4881112 (1989-11-01), Matsushita

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