Superlattice field effect transistor with monolayer confinement

Details Superlattice field effect transistor with monolayer confinement Superlattice field effect transistor with monolayer confinement

1990-12-20

1991-09-17

Prenty, Mark

357 16, 357 22, H01L 2712, H01L 29161, H01L 2980

Patent

active

050499513

ABSTRACT:
A heterojunction field effect transistor (HFET) having a source, drain, and channel, wherein the channel is a top layer of a superlattice buffer, eliminating the need for a thick buffer layer. The superlattice buffer comprises alternating barrier and quantum well layers which are thin enough to provide wide separation in energy bands within the quantum wells. In a preferred embodiment the channel comprises a quantum well and one to five monolayers having a different bandgap than the channel region and serves to modify electron wave function and conduction band energy in the channel region. Preferably, a ten period AlAs/GaAs superlattice is formed underneath the channel.

REFERENCES:
patent: 4835583 (1989-05-01), Morioka et al.
Applied Physics Letters, vol. 45, #11, pp. 1227-1229 by Dawson et al. Dec. 1984.
Journal of Vac. Sci. Technol. B, vol. 2, #2, pp. 265-268 by Schaff et al. Apr. 1984.

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