Method of dicing semiconductor wafer along protective film forme

Details Method of dicing semiconductor wafer along protective film forme Method of dicing semiconductor wafer along protective film forme

1990-09-14

1992-10-20

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437946, H01L 2180

Patent

active

051570017

ABSTRACT:
According to the invention, a protective film which is separated from an integrated circuit part and partly buried in the semiconductor wafer is formed in the surface region of semiconductor wafer along a scribing line between adjacent integrated circuit parts. Upon cutting or dicing along the scribing lines, a portion of the protective film may remain along the edges thereof. Thus, the periphery of the semiconductor chips produced by dicing is protected by the protective film, and if an external force is applied to the periphery of the semiconductor chip in the dicing process or die-bonding process, the force is absorbed by the protective film and is hence lessened. Especially in this invention, since the protective film formed along the scribing line is formed as being separated from the integrated circuit part, and partly buried in the semiconductor wafer, the external force applied to other semiconductor wafer is fully suppressed by the protective film, and the integrated circuit part may be effectively prevented from cracking. Accordingly the yield (productivity) of the process and the reliability of the semiconductor device may both be enhanced.

REFERENCES:
patent: 3838501 (1974-10-01), Umbaugh
patent: 4446194 (1984-05-01), Candelaria et al.
patent: 4563227 (1986-01-01), Sakai et al.
patent: 4729816 (1988-03-01), Nguyen et al.
patent: 4804641 (1989-02-01), Arlt et al.

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