Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1990-02-27
1991-09-17
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330295, 330311, H03F 316
Patent
active
050498355
ABSTRACT:
Conventional cascode circuits achieve a performance which is not optimum. To enhance performance, the cascode circuit of the present invention has an input stage FET that has a saturation current which is greater than the saturation current of the output stage common gate FET. Since the maximum power of a cascode circuit is related to the maximum voltage swing at the drain of the common gate FET, when the saturation current of the common source FET is greater than that of the common gate FET, the common source FET essentially acts as a switch to turn the common gate FET fully on, without dissipating any appreciable voltage from the same, so that a maximum voltage swing may be produced at the drain of the common gate FET.
REFERENCES:
Osafune et al., "A Low-Noise GaAs Monolithic Broad-Band Amplifier Using a Drain Current Saving Technique", IEEE Transactions on Microwave Theory and Techniques, vol. MTT-33, No. 6, Jun. 1985, pp. 543-545.
Zhuravlev et al., "Amplifier for Semiconductor Gamma Detectors", Instruments and Experimental Techiques, (U.S.A.), No. 2, Mar., Apr., 1970, pp. 460-463.
Grumman Aerospace Corporation
Mullins James B.
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