Semiconductor substrate minority carrier lifetime measurements

Details Semiconductor substrate minority carrier lifetime measurements Semiconductor substrate minority carrier lifetime measurements

1990-05-31

1991-09-17

Karlsen, Ernest F.

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

With rotor

324158T, G01R 3126

Patent

active

050498169

ABSTRACT:
A sensor system (50) for measurements of semiconductor wafer minority carrier lifetime. The sensor (50) includes a microwave source (78) for generating a plurality of microwave signals and a waveguide (52) for emitting the microwave signals in the direction of the semiconductor wafer (20) in a processsing chamber (18). A collector waveguide (84) detects the reflected microwave signals from the semiconductor wafer (20) and directs the microwave signals to and from the emitter waveguide (52) so as to generate a plurality of electrical signals relating to semiconductor wafer (20) physical properties. A photon energy source (102) intermittently emits photon energy in the direction of the semiconductor wafer (20). Based on the differing microwave reflectance measurements following the injection and removal of photon energy, process control computer (76) calculates semiconductor substrate physical characteristics. These physical characteristics include semiconductor minority-carrier lifetime, electrical conductivity, doping level, and temperature.

REFERENCES:
patent: 3939415 (1976-02-01), Terasawa
patent: 4839588 (1989-06-01), Jantsch et al.
patent: 4885534 (1989-12-01), Eck et al.
Edward Yang, "Nonequilibrium Characteristics of Semiconductors", Fundamentals of Semiconductor Devices, McGraw Hill Book Company, 1978 pp. 32-41.
A. Grove, "Origin of Recombination-Generation Centers", from Physics and Technology of Semiconductor Devices, John Wiley & Sons, Publishers, 1967, pp. 140-145.

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