Semiconductor device

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Details

357 65, 357 68, H01L 2348

Patent

active

047543183

ABSTRACT:
A semiconductor device has a semiconductor substrate, a first insulating layer formed on the substrate, a conductive body formed on the first insulating layer, a second insulating layer formed on the first insulating layer and the conductive body and having a contact hole formed at a contact area to reach the conductive body, and a first conductive layer formed on the second insulating layer and the conductive body. The conductive body has a conductive member formed on the first insulating layer in the contact area, and a second conductive layer formed on the first insulating layer and the conductive member.

REFERENCES:
patent: 3936865 (1976-02-01), Robinson
patent: 4110776 (1978-08-01), Rao et al.
patent: 4316200 (1982-02-01), Ames et al.
patent: 4507852 (1985-04-01), Karulkar

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