Local interconnect method and structure

Details Local interconnect method and structure Local interconnect method and structure

1990-12-21

1992-10-20

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 21, 437 41, 437200, 437192, 437193, H01L 2120

Patent

active

051569949

ABSTRACT:
An improved local electrical interconnect device fabrication and method are provided. Reacted refractory metal contacts and local interconnect lines (54) and (56) are formed by reacting a deposited refractory metal layer (53) with selectively grown semiconductor regions (48) and (50). Regions (48) and (50) are formed after a masked ion implantation which forms loosely bonded surface regions (44) and (46) within field insulating regions (12). As a result of the ion implantation, semiconductor regions (48a) and (50a) are able to form over field insulating regions (12).

REFERENCES:
patent: 4102733 (1978-07-01), De La Moneda et al.
patent: 4822749 (1989-04-01), Flanner et al.
patent: 4868618 (1989-09-01), Kalnitsky et al.
patent: 4873204 (1989-10-01), Wong et al.
patent: 5001082 (1991-03-01), Goodwin-Johansson

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