Floating-gate memory cell with tailored doping profile

Details Floating-gate memory cell with tailored doping profile Floating-gate memory cell with tailored doping profile

1990-10-01

1992-10-20

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 45, 437 48, 437 49, 437 52, 357 235, 357 2312, 148DIG109, H01L 29788, H01L 27115

Patent

active

051569906

ABSTRACT:
A floating-gate memory cell with an improved doping profile. After the substrate background doping has been set to a desired level (e.g. by a high dose implant and long drive in), two implant of opposite type are used to shape the doping profile of the floating-gate transistor. A boron implant is used to provide significantly increased p-type doping underneath the channel, at depths near the midpoint of the source/drain diffusions. A shallow arsenic implant partially compensates this boron implant at the surface, to set the threshold voltage as desired. The region of substantially increased p-type doping helps to suppress the lateral parasitic bipolar transistor which can otherwise suppress programmation, and also (by providing increased doping at the drain boundary) increases hot electron generation.

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