Method of forming a MOS field-effect transistor

Details Method of forming a MOS field-effect transistor Method of forming a MOS field-effect transistor

1988-09-22

1991-09-17

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 40, 437 41, 437228, 437233, 437235, 357 234, H01L 21335

Patent

active

050495127

ABSTRACT:
A vertical MOSFET, of the standard type or the conductivity modulated type, having a very short source region is obtained by first introducing an impurity through a diffusion window to form the source region, second oxidizing the bare silicon surface in the diffusion window and third removing the oxide layer formed in the diffusion window. During the oxidation step, the impurity atoms diffuse laterally from the diffusion window without being caught by the growing oxide layer, and the length of the source region is determined by the extent of the lateral diffusion.

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patent: 4748103 (1988-05-01), Hollinger
Hu et al., "Second Breakdown of Vertical Power MOSFET's", IEEE Transactions on Electron DEvices, vol. ED-29, No. 8, Aug. 1982, pp. 1287-1293.

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