Manufacturing method for a Bi-CMOS by trenching

Details Manufacturing method for a Bi-CMOS by trenching Manufacturing method for a Bi-CMOS by trenching

1988-12-29

1992-10-20

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 59, 437 41, 437 57, 437203, 357 43, 357 234, H01L 21265

Patent

active

051569841

ABSTRACT:
A manufacturing method for a Bi-CMOS by trenching which is allowed to manufacture the bipolar celement and CMOS element simultaneously on one substrate by trench etching, comprising the processes of growing an oxide layer, forming N.sup.+ buried layer, growing n-type epitaxial layer after removing the oxide layer, growing again an oxide layer, a plurality of isolation regions being formed by diffusing a boron impurity, the base regions as well as the collector, emitter and drain regions are formed, the trenched grooves are formed after removing said oxide layer, an oxide layer is grown after inverting the epitaxial layer, the electrode window is opened, and a metal such as alminium is deposited thereby the electrode terminals of base, emitter and collector of bipolar element and also the drain, source and gate of CMOS are drawn out, respectively.

REFERENCES:
patent: 4704456 (1987-11-01), Thomas
patent: 4752589 (1988-06-01), Schaber
patent: 4772567 (1988-09-01), Hirao
patent: 4778774 (1988-10-01), Blassfeld
patent: 4826783 (1989-05-01), Chai
Blum, J. "Formation of Integrated . . . " vol. 15, No. 2, Jul. 1972, pp. 441-442.

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