Pattern shift measuring method

Details Pattern shift measuring method Pattern shift measuring method

1992-01-03

1992-10-20

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437225, 356400, 356401, H01L 2100, H01L 2102

Patent

active

051569825

ABSTRACT:
A method capable of measuring pattern shift of a semiconductor wafer in a short period of time with utmost ease and in an inexpensive manner is disclosed, wherein a main scale pattern and a vernier scale pattern are formed in parallel spaced confrontation on the semiconductor wafer, then one of the main scale pattern and the vernier scale pattern is covered with an oxide film layer, subsequently an epitaxial growing process is performed to form an epitaxial layer over the semiconductor wafer, and after that the dispalcement between the main scale pattern and the vernier scale pattern is measured.

REFERENCES:
patent: 4606643 (1986-08-01), Tam
patent: 4623257 (1986-11-01), Feather
patent: 4757207 (1988-07-01), Chappelow et al.
patent: 5017514 (1991-05-01), Nishimoto

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