Method for nucleating and growing tungsten films

Details Method for nucleating and growing tungsten films Method for nucleating and growing tungsten films

1984-09-24

1986-04-22

Childs, Sadie L.

Coating processes

Electrical product produced

Metal coating

204192S, 427 99, 427253, 427255, 4272557, 427404, B05D 512

Patent

active

045842078

ABSTRACT:
Adherent deposits of tungsten are formed on receiving surfaces by preparing the receiving surface and thereafter forming a thin deposit of polycrystalline silicon on the surface. The surface and the deposited polycrystalline silicon is then exposed to a hydrogen containing tungsten fluoride gas at a suitable temperature to induce the adherent growth of tungsten film on the surface by reaction of the silicon with the tungsten fluoride gas. It is possible to form the polycrystalline silicon in a pattern on the surface and to form the tungsten deposit in the pattern in which the polycrystalline silicon had been deposited.

REFERENCES:
patent: 3519479 (1970-07-01), Inoue et al.
patent: 3785862 (1974-01-01), Grill
patent: 4349408 (1982-09-01), Tarng et al.
patent: 4383130 (1983-05-01), Uroshevich
patent: 4404235 (1983-09-01), Tarng et al.

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