Silicon carbide sintered body and a manufacturing method therefo

Details Silicon carbide sintered body and a manufacturing method therefo Silicon carbide sintered body and a manufacturing method therefo

1986-03-27

1988-06-28

Capella, Steven

Compositions: ceramic

Ceramic compositions

Carbide or oxycarbide containing

252516, 501 89, 501 90, 501 91, 501 92, C04B 3556

Patent

active

047539038

ABSTRACT:
A silicon carbide sintered body suitable for electrical discharge machining and a method for its manufacture are disclosed. The silicon carbide sintered body comprises 0.5-5% by weight of AlN, 0.5-3% by weight (as Ti) of a Ti compound, 0.5-8% by weight of C, 0-3% by weight (as B) of B or a B compound, and a remainder of substantially SiC. It has a volume resistivity at room temperature of not greater than 10 ohm-cm and a density of at least 90% of the theoretical density of SiC. The manufacturing method comprises shaping a mixture of the raw materials and sintering the shaped green body in a non-oxidizing atmosphere at a temperature of 2000.degree.-2300.degree. C.

REFERENCES:
patent: 4336215 (1982-06-01), Yajima et al.
patent: 4555358 (1985-11-01), Matsushita et al.

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