Fishing – trapping – and vermin destroying
Patent
1986-11-21
1988-06-28
Roy, Upendra
Fishing, trapping, and vermin destroying
357 91, 437 21, 437 34, 437 39, 437 45, 437175, 437200, 437912, H01L 21225, H01L 21308
Patent
active
047538961
ABSTRACT:
A new way of making sidewall channel stops for silicon on insulator devices (including silicon on oxide, silicon on nitride, and silicon on sapphire devices). While the moat regions 11, 13 (where the active devices will be formed) are covered by thick masking material 24, a high energy implantation step introduces additional doping into exposed silicon regions 14'. Before the mesa etch is performed to isolate the individual active device regions 32 a filament 28 is formed on the walls of the masking material 24 which covers the predetermined locations of the active device regions 32. The mesa etch is then performed using a chemistry which will be blocked not only by the original masking material 24 but also by the sidewall filaments 28. Thus, the doping level defined by implantation into regions 14' will extend into the sidewalls of the mesas 32 for a distance which is controlled not only by the lateral diffusion length of those dopants, but also by the thickness of the sidewall filament 28.
REFERENCES:
patent: 4393578 (1983-07-01), Cady et al.
patent: 4408386 (1983-10-01), Takayashi et al.
patent: 4534824 (1985-08-01), Chen
patent: 4561932 (1985-12-01), Gris et al.
patent: 4641417 (1987-02-01), McDavid
patent: 4653173 (1987-03-01), Chen
Braden Stanton C.
Comfort James T.
Roy Upendra
Sharp Melvin
Texas Instruments Incorporated
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