Method of producing semiconductor device

Details Method of producing semiconductor device Method of producing semiconductor device

1980-06-03

1982-06-15

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 29591, 148 15, 148187, 156652, 156653, 357 65, H01L 21225, H01L 21312, B44C 122

Patent

active

043343490

ABSTRACT:
Disclosed is a method of producing a semiconductor device, comprising the steps of (a) forming a first insulating layer consisting of a lower silicon oxide film and an upper slicon nitride film on the surface of a semiconductor substrate, (b) forming a second insulating layer consisting of silicon oxide on the first insulating layer, (c) forming a third insulating layer consisting of silicon nitride on the second insulating layer, (d) selectively removing the third insulating layer so as to form a mask used for forming a hole for an interconnection electrode, (e) etching away the exposed portion of the second insulating layer by using the mask so as to form the hole for the interconnection electrode, (f) forming a conductive material layer on the entire surface of the structure obtained by step (e), a contact hole formed in the first insulating layer after step (a) or (e) being filled with the conductive material so as to allow the conductive material layer disposed on the first insulating layer to be connected to the semiconductor substrate, and (g) removing the second insulating layer by etching so as to lift-off the third insulating layer and the conductive material layer laminated on the second insulating layer, the remaining conductive materal layer providing the interconnection electrode.

REFERENCES:
patent: 3839111 (1974-10-01), Ham et al.
patent: 4030942 (1977-06-01), Keenam
patent: 4045594 (1977-08-01), Maddocks
patent: 4076575 (1978-02-01), Chang
patent: 4135289 (1979-01-01), Brews
patent: 4144101 (1979-03-01), Rideout
patent: 4160683 (1979-07-01), Roche

Affiliated with

Also associated with

Rating

Method of producing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of producing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1913920