Method of making junction isolated bipolar device in unisolated

Details Method of making junction isolated bipolar device in unisolated Method of making junction isolated bipolar device in unisolated

1979-07-27

1982-01-19

Roy, Upendra

Metal treatment

Compositions

Heat treating

148186, 148187, 357 43, 357 91, H01L 21263, H01L 2102, H01L 2120, H01L 2972

Patent

active

043115322

ABSTRACT:
A bipolar device is formed in an N epitaxial layer region isolated from an N substrate and the remainder of the N epitaxial layer by a P surface ring and a buried P region. An N channel device is formed in the P surface ring and a P channel device is formed in the N epitaxial layer. A buried N region is formed in the buried P region using the same mask used to form the buried P region.

REFERENCES:
patent: 3576475 (1971-04-01), Kronlage
patent: 3581165 (1971-05-01), Seelbach
patent: 3595715 (1971-07-01), Thire et al.
patent: 3609479 (1971-11-01), Lin
patent: 3636372 (1972-01-01), Hujita et al.
patent: 3865649 (1975-02-01), Beasom
patent: 4027324 (1977-05-01), Yagi et al.
patent: 4120707 (1978-10-01), Beasom
patent: 4122481 (1978-10-01), Horie

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