Electron beam drawing apparatus and method of the same

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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H01J 37302

Patent

active

060693649

ABSTRACT:
A number of waiting deflections and a connection error between shots can be reduced by scanning and exposing a formed beam having a large area. A continuous scanning deflector and a scan limiter are added to a variable forming type electron beam column and the drawing is performed such that a state in which the electron beam is limited by the scan limiter is continuous to a state in which the electron beam is irradiated on a face of a sample. Accordingly, the number of awaiting deflections and the connection error between shots are reduced. Further, a high-speed and highly accurate drawing of a 45.degree. slanted figure is made possible.

REFERENCES:
patent: 4167676 (1979-09-01), Collier
patent: 5256881 (1993-10-01), Yamazaki et al.

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