Coherent light generators – Particular active media – Semiconductor
Patent
1991-10-30
1993-10-12
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
372 92, 372 96, H01S 319
Patent
active
052532623
ABSTRACT:
A microcavity semiconductor laser disclosed therein includes a double-heterostructure section including an intermediate active layer sandwiched between a first or lower cladding layer and a second or upper cladding layer above a semiconductive substrate. A first multi-layered reflector section is arranged between the substrate and the double-heterostructure section to have its reflectance which becomes maximum near the oscillation wavelength of the laser. The upper cladding layer is semi-spherically formed. A three-dimensional optical reflector covers the double-heterostructure section, for controlling spontaneous emission obtained in the double-heterostructure section along various directions, and for increasing the coupling ratio of spontaneous emission with a specific laser mode, thereby to decrease the threshold current.
REFERENCES:
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Yamamoto, Yoshihisa; "Controlled Spontaneous Emission in Semiconductor Lasers", (1989, Nov.) pp. 1-9: International Forum on the Frontier of Telecomm. Tech.
Yablonovitch, Eli; "Inhibited Spontaneous Emission in Solid-State Physics & Electronics", May 18, 1987; Physical Review Letters, vol. 58, No. 20, pp. 2059-2062.
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Kawakyu Yoshito
Kurobe Atsushi
Kushibe Mitsuhiro
Sadamasa Tetsuo
Tezuka Tsutomu
Davie James W.
Kabushiki Kaisha Toshiba
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