Method for fabricating trench-isolation structure

Details Method for fabricating trench-isolation structure Method for fabricating trench-isolation structure

1998-05-18

2000-05-30

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438433, 438437, 148DIG50, H01L 2176

Patent

active

060690577

ABSTRACT:
A method of fabricating a trench-isolation structure is provided. The fabricated trench-isolation structure in accordance with the present invention is formed on a semiconductor substrate. Sequentially, a buffer layer and a first isolating layer are formed to overlie the semiconductor substrate. After the first isolating layer is patterned to form an opening, the step of forming spacers on the sidewall of the opening follows. At the same time, within the range of the opening the portion of the buffer layer not covered by the spacers is removed to expose a portion of the semiconductor substrate. Then, the exposed semiconductor substrate is etched to form a trench. After a second isolating layer is formed on the peripherals of the trench, an isolation plug is filled in the trench.

REFERENCES:
patent: H204 (1987-02-01), Oh et al.
patent: 4523369 (1985-06-01), Nagakubo
patent: 4952524 (1990-08-01), Lee et al.
patent: 5387540 (1995-02-01), Poon et al.
patent: 5674775 (1997-10-01), Ho et al.
patent: 5677233 (1997-10-01), Abiko
patent: 5801083 (1998-09-01), Yu et al.
patent: 5874317 (1999-02-01), Stolmeijer

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