Method of manufacturing semiconductor light-emitting device

Details Method of manufacturing semiconductor light-emitting device Method of manufacturing semiconductor light-emitting device

1998-11-13

2000-05-30

Fahmy, Wael

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

438930, 257 78, 257103, 257201, 257614, 372 44, 372 45, H01L 2100

Patent

active

060690208

ABSTRACT:
In a method of manufacturing a semiconductor light-emitting device composed of a II-VI compound semiconductor in which at least more than one kind of elements of Zn, Be, Mg, Cd or Hg are used as a II-group element and at least more than one kind of elements of Se, S, Te are used as a VI-group element and which includes first conductivity type and second conductivity type cladding layers and an active layer, a supply ratio VI/II ratio of VI-group element and II-group element required when the active layer is epitaxially deposited is selected to be greater than 1.1 and the active layer is deposited epitaxially. Thus, there may be obtained a highly-reliable semiconductor light-emitting device whose life time is made longer.

REFERENCES:
patent: 5296718 (1994-03-01), Fujita et al.
patent: 5433170 (1995-07-01), Toda et al.
patent: 5705831 (1998-01-01), Uemura et al.
patent: 5766345 (1998-06-01), Tomiya et al.
patent: 5780322 (1998-07-01), Tamamura et al.

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