Method for production of polysilanes and polygermanes, and depos

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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417 37, 417 39, B05D 306

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active

047924608

ABSTRACT:
A process is provided for forming high purity polysilanes or polygermanes by electric discharge wherein the monosilane or monogermane is provided in a gaseous mixture with a carrier gas at atmospheric pressure. The polysilanes or polygermanes produced at atmospheric pressure are further deposited by various means onto a substrate as hydrogenated amorphous silicon or germanium. The polysilane may also be used for the deposition of hydrogenated amorphous silicon alloys.

REFERENCES:
patent: 3824121 (1974-07-01), Bradley et al.
patent: 4033286 (1977-07-01), Chern et al.
patent: 4100330 (1978-07-01), Donley
patent: 4353788 (1982-10-01), Jeffrey et al.
patent: 4386117 (1983-05-01), Gordon
patent: 4388344 (1983-06-01), Shuskus et al.
patent: 4430149 (1984-02-01), Berkman
patent: 4439463 (1984-03-01), Miller
patent: 4491604 (1985-01-01), Lesk et al.
patent: 4505947 (1985-03-01), Vukanovic et al.
patent: 4509451 (1985-04-01), Collins et al.
patent: 4525382 (1985-06-01), Sugioka
patent: 4526805 (1985-07-01), Yoshizawa
patent: 4539068 (1985-09-01), Takagi et al.
patent: 4634601 (1987-01-01), Hamawana et al.
Spanier, et al., Inorganic Chem. 1, 432-433 (1962), "Conversion of Silane to Hefer Silanes in Silent Elect. ".
Gau et al; appl., Phys. Ltr. 39, 436-438 (1981), "Prep. of Amorphous Silicon Filons by Chemical Vaper Deposition from Higher Silanes".
Delahoy et al., Proc. Soc. Photo-Optical Inst. Eng. vol. 47-54 (1983), "Prop of Hydrog. Amorphous Silicon Prep. by Chem. Vapor Depo. from Higher Silanes".
Ellis et al., J. Appl. Phys. 54, 5381-5384 (1983), "Simple Method of Prop. Hydrog. Amorphous Silicon Films by Chem. Vapor Depo at atmos. Pressure".
Ashida et al., Japan J. Appl. Phys., 23, <129-131 (1984), "Hydros. Amor. Silicon Prod. by Pyrolysis of Disilane in a Hot Wall Reactor".
Hegedus et al., Proc XVTI IEEE photor. Spec. Conf., 239-244 (1984), "CVD Amorphous Silicon Solar Cells".

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