Method for resistor trimming by metal migration

Details Method for resistor trimming by metal migration Method for resistor trimming by metal migration

1986-04-28

1989-09-26

Hille, Rolf

357 68, 357 75, H01L 2713, H01L 2906, H01L 2908

Patent

active

048704725

ABSTRACT:
A method for trimming a diffused or implanted resistor located within an integrated circuit is disclosed. This technique for trimming a resistor requires the use of high current pulses and geometric shaped metal contacts. The current pulses react with the electropositive metal atoms in the thin film conductor and cause the metal atoms to migrate to another location, thus altering the value of the resistor by progressively decreasing the conductivity of the resistor.

REFERENCES:
patent: 4467312 (1984-08-01), Komatsu
"Detecting Defects in Integrated Semiconductor Circuits"-Hubacher et al., IBM Technical Disclosure Bulletin, vol. 14, No. 9, Feb. 1972, pp. 2615-2617.

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