Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1998-04-23
2000-02-15
Nguyen, Kiet T.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
25044211, H01J 3720
Patent
active
060256028
ABSTRACT:
An ion implantation system that rapidly and efficiently processes large quantities of workpieces, such as flat panel displays. The ion implantation system includes a high vacuum process chamber that mounts an ion source, a single workpiece translating stage, and a loadlock. The single workpiece handling assembly mounted within the process chamber both removes the workpiece from the loadlock and supports the workpiece during implantation by the ion beam generated by the ion source. The process chamber is in selective fluid communication with a loadlock assembly, which in turn is mechanically integrated with a workpiece loading or end station. Additionally, the workpiece handling assembly includes a translation stage or element for translating the workpiece in a linear scanning direction during implantation. This linear scanning direction extends along a path transverse or orthogonal to the horizontal longitudinal axis of the implantation system. According to one practice, the scanning direction and the longitudinal axis form an angle therebetween that is less than or equal to about 85 degrees.
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Blake Julian G.
Brailove Adam A.
Hughey Barbara J.
McRay Richard F.
Rose Peter H.
Eaton Corporation
Laurentano Anthony A.
Nguyen Kiet T.
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