Self-aligned gaas fet with low 1/f noise

Details Self-aligned gaas fet with low 1/f noise Self-aligned gaas fet with low 1/f noise

1987-04-17

1989-12-19

Clawson, Jr., Joseph E.

357 15, 357 16, 357 55, 357 58, H01L 2980

Patent

active

048886262

ABSTRACT:
A self-aligned GaAs FET with an active channel which is unaffected by sure charge trapping/emission. The device comprises a channel of n-doped GaAs, a source and drain regions of n.sup.+ GaAs disposed at opposite ends of the channel, a semi-insulating GaAs layer disposed over the channel, with this GaAs layer having open first and second end surfaces disposed at an angle of greater than or equal to 45.degree. relative to the channel plane. A cavity is disposed in the GaAs layer exposing a portion of the channel, and a gate metallization is disposed over the GaAs layer and extending from the first end surface to the second end surface of the GaAs layer and directly contacting the exposed portion of the channel region in the cavity to form a Schottky barrier contact. This gate metallization is not disposed in contact with a significant portion of either of the first and second end surfaces. The ends of the gate metallization overhang slightly the end surfaces of the GaAs layer in order to provide masking to maintain the first and second end surfaces open during fabrication. An insulator such as air may be disposed in contact with these end surfaces.

REFERENCES:
patent: 3851379 (1974-12-01), Gutknecht et al.
patent: 4182023 (1980-01-01), Cohen et al.
patent: 4305760 (1981-12-01), Trudel
patent: 4322738 (1982-03-01), Bell et al.
patent: 4419811 (1983-12-01), Rice
patent: 4419813 (1983-12-01), Iwai
patent: 4429452 (1984-02-01), Meignant
patent: 4536942 (1985-08-01), Chao et al.

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