Process for preparing a superconducting thin film of compound ox

Details Process for preparing a superconducting thin film of compound ox Process for preparing a superconducting thin film of compound ox

1992-05-20

1993-10-12

Weisstuch, Aaron

Superconductor technology: apparatus, material, process

High temperature , per se

Having tc greater than or equal to 150 k

20419224, 427 62, 505730, 505731, 505732, H01L 3900, C23C 1434

Patent

active

052525538

ABSTRACT:
In order to prepare a good quality crystalline thin film of compound oxide superconductor on a silicon wafer, before the thin film of compound oxide superconductor is deposited on the silicon wafer, the silicon wafer is first heated at a temperature of higher than 900.degree. C. in a high vacuum of less than 10.sup.-6 Torr, then, a thin film of ZrO.sub.2 is deposited on the silicon wafer, and finally, the thin film of ZrO.sub.2 deposited on the silicon wafer is annealed in air at a temperature of 800.degree. to 850.degree. C.

REFERENCES:
H. Myoren et al, Jap. J. Appl. Phys., vol. 27, No. 6, Jun. 1988, pp. L1068-L1070.
K. Harada et al, Jap. J. Appl. Phys., vol. 27, No. 8, Aug. 1988, pp. L1524-L1526.
M. Migliuolo et al, Appl. Phys. Lett., vol. 54, No. 9, Feb. 1989, pp. 859-861.

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