TEOV doping of gallium arsenide

Details TEOV doping of gallium arsenide TEOV doping of gallium arsenide

1992-10-19

1993-10-12

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 85, 437110, 437133, 437939, 437945, 437959, 437911, 148DIG23, 148DIG40, 148DIG41, 148DIG130, H01L 21205

Patent

active

052525120

ABSTRACT:
GaAs films compensated with TEOV to reduce free electron concentration are grown having superior morphology by heating the TEOV above the temperature used in the prior art, filtering the other constituents but not the TEOV, and reducing the arsenic ambient during the preliminary heating phase.

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Akiyama et al., "Growth of Vanadium-Doped Semi-Insulating GaAs by MOCVD" J. Crys. Growth, 68, (1984), pp. 39-43.
Akiyama et al., "Growth of GaAs on Si by MOCVD," J. Crys. Growth, 68 (1984), pp. 21-26.

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