Wide band-gap semiconductors having low bipolar resistivity and

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437 24, 437937, 148DIG69, 148DIG84, H01L 21265

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052524990

ABSTRACT:
A wide band-gap semiconductor, such as a II-VI semiconductor having low bipolar resistivity and a method for producing such a semiconductor. To form this semiconductor, atomic hydrogen is used to neutralize compensating contaminants. Alternatively, the semiconductor dopant and hydrogen are introduced into the undoped semiconductor together, and later, the hydrogen is removed leaving an acceptably compensation free wide band-gap semiconductor.

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