Method of manufacturing a bipolar transistor

Details Method of manufacturing a bipolar transistor Method of manufacturing a bipolar transistor

1988-04-29

1989-12-19

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 31, 437233, 437186, 148DIG124, 148DIG11, 357 59, H01L 21265

Patent

active

048883069

ABSTRACT:
A semiconductor device comprising a semiconductor substrate with at least one semiconductor region formed in it, a polycrystalline silicon layer formed in contact with the semiconductor region and a metal layer formed on the polycrystalline silicon layer. The peripheral portion and outer edges of the polycrystalline silicon layer are covered with an insulation layer.

REFERENCES:
patent: 3915767 (1975-10-01), Welliver
patent: 4089103 (1978-05-01), Hendrickson
patent: 4197632 (1980-04-01), Aomura
patent: 4210996 (1980-07-01), Amemiya
patent: 4224088 (1980-09-01), Komatsu et al.
patent: 4279671 (1981-07-01), Komatsu
patent: 4416049 (1970-05-01), McElroy

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