Submerged wall isolation of silicon islands

Details Submerged wall isolation of silicon islands Submerged wall isolation of silicon islands

1985-11-07

1989-12-19

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG50, 148DIG116, 357 49, 357 55, 437 62, 437 67, 437 79, 437233, 437239, 437985, H01L 2176, H01L 21302

Patent

active

048883000

ABSTRACT:
To completely isolate an island of silicon, a trench is cut into an epitaxial layer to provide access to a differently doped buried layer. While suspending the portion of the epitaxial layer surrounded by the trench by means of an oxide bridge, the underlying region of the buried layer is etched away to form a cavity under the active area. This cavity, as well as the surrounding trench, is then filled with a suitable insulating material to isolate the active island from the substrate.

REFERENCES:
patent: 4021266 (1977-05-01), Aine
patent: 4353086 (1982-10-01), Jaccodine et al.
patent: 4419150 (1983-12-01), Soclof
patent: 4466180 (1984-08-01), Soclof
patent: 4485551 (1984-12-01), Soclof
patent: 4522682 (1985-06-01), Soclof
patent: 4580331 (1986-04-01), Soclof
patent: 4584762 (1986-04-01), Soclof
patent: 4611387 (1986-09-01), Soclof

Affiliated with

Also associated with

Rating

Submerged wall isolation of silicon islands does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Submerged wall isolation of silicon islands, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Submerged wall isolation of silicon islands will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1902654