Process for the preparation of silicon oxynitride-containing pro

Details Process for the preparation of silicon oxynitride-containing pro Process for the preparation of silicon oxynitride-containing pro

1988-05-04

1989-12-19

Bell, Mark L.

Chemistry of inorganic compounds

Silicon or compound thereof

Oxygen containing

501 97, C04B 3558

Patent

active

048881597

ABSTRACT:
This invention relates to a process for the preparation of Si.sub.2 N.sub.2 O-containing materials which comprises reacting an amorphous, non-porous silicon dioxide material with flowing, ammonia-containing gas at temperatures of 950.degree.-1300.degree. C. The expression "flowing, ammonia-containing gas" refers to a large number of different gas mixtures which may contain only ammonia or one or more other gases besides ammonia, such as nitrogen, hydrogen, carbon monoxide, carbon dioxide or oxygen. Preferably, pure ammonia or ammonia mixed with the customary uncoverted reaction components of the ammonia synthesis, optionally mixed with traces of carbon dioxide, carbon monoxide or oxygen, is employed.

REFERENCES:
patent: Re28348 (1975-02-01), Washburn
patent: 2968530 (1961-01-01), Forgeng et al.
patent: 4021529 (1977-05-01), Kuriakose

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