Pin junction photovoltaic element having I-type semiconductor la

Batteries: thermoelectric and photoelectric – Photoelectric – Cells

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136260, 136264, 136265, 357 16, 357 30, 357 58, 357 59, 357 61, H01L 3106

Patent

active

048880620

ABSTRACT:
An improved pin junction photovoltaic element which generates photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least said i-type semiconductor layer comprises a member selected from the group consisting of a ZnSe:H deposited film containing the hydrogen atoms in an amount of 1 to 4 atomic % and crystal grain domains in a proportion of 65 to 85 vol % per unit volume and a ZnSe.sub.1-x Te.sub.x :H deposited film containing the hydrogen atoms in an amount of 1 to 4 atomic % and crystal grain domains in a proportion of 65 to 85 vol % per unit volume and also containing the selenium atoms and the tellurium atoms in a Se/Te quantitative ratio of 1:9 to 3:7.
The pin junction photovoltaic element exhibits an improved photoelectric conversion efficiency for short-wavelength light and has a high open-circuit voltage. The pin junction photovoltaic element does not exhibit any undesirable light-induced fatigue even upon continuous use for a long period of time.

REFERENCES:
patent: 4596645 (1986-06-01), Stirn

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