Patent
1988-12-19
1992-04-07
James, Andrew J.
357 231, 357 63, 357 65, 357 71, H01L 2348
Patent
active
051032856
ABSTRACT:
A silicon carbide layer between a silicon substrate or layer and a metal layer because silicon carbide has many properties similar to those of silicon, has a very slow diffusion rate of a metal through the silicon carbide, or prevents a diffusion of a metal into the silicon, and can be deposited by CVD, which has an advantage of a good coverage over a step portion such as a contact window.
REFERENCES:
patent: 3794516 (1974-02-01), Engeler et al.
patent: 4722913 (1988-02-01), Miller
patent: 4757028 (1988-07-01), Kondoh et al.
patent: 4855254 (1989-08-01), Eshita et al.
Kimura et al., "Effect of Mixing Ions on the Formation Process of B-SiC Fabricated by Ion Beam Mixing," Thin Solid Films, 157 (1988), pp. 117-127.
T. Sugii et al. "Si Heterojunction Bipolar Transistors with Single-Crystalline .beta.-SiC Emitters" J. Electrochem. Soc. Solid-State Science and Technology, vol. 134, No. 10, Oct. 1987, pp. 2545-2549.
F. Mieno et al. "Selective Doped Polysilicon Growth " J. Electrochem. Soc. Solid-State Science and Technology, Nov. 1987, vol. 134, No. 11, pp. 2862-2867.
F. T. J. Smith, "Wilicon charge-handling device employing SiC electrodes", Research Disclosure, No. 173, Sep. 1978, pp. 36-39, Abstract No. 17353.
Doki Masahiko
Eshita Takashi
Furumura Yuji
Itoh Kikuo
Mieno Fumitake
Bowers Courtney A.
Fujitsu Limited
James Andrew J.
LandOfFree
Silicon carbide barrier between silicon substrate and metal laye does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Silicon carbide barrier between silicon substrate and metal laye, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon carbide barrier between silicon substrate and metal laye will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1899218