MOS-cascoded bipolar current sources in non-epitaxial structure

Details MOS-cascoded bipolar current sources in non-epitaxial structure MOS-cascoded bipolar current sources in non-epitaxial structure

1989-10-18

1992-04-07

Larkins, William D.

357 35, 357 41, 357 46, H01L 2702, H01L 2972

Patent

active

051032813

ABSTRACT:
A 16-bit D/A converter formed on a single monolithic chip and having two cascaded stages each including a 256-R resistor string DAC. The analog output voltage of the first stage is coupled to the second stage by two buffer amplifiers each formed by a non-epitaxial process using a P-type substrate. The amplifiers include NMOS and PMOS-cascaded bipolar current sources arranged to avoid the use of metallization to provide for electrical interconnections within the source.

REFERENCES:
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patent: 3639787 (1972-02-01), Lee
patent: 4237472 (1980-12-01), Hollingsworth
patent: 4678936 (1987-07-01), Holloway
patent: 4891533 (1990-01-01), Holloway
Electronic Design, vol. 31, No. 22, pp. 44-51.

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