Process for the production of a MIS field effect transistor havi

Details Process for the production of a MIS field effect transistor havi Process for the production of a MIS field effect transistor havi

1980-03-25

1981-12-15

Walton, Donald L.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 148 15, H01L 2978

Patent

active

043052010

ABSTRACT:
A process is disclosed for the production of a MIS field effect transistor having an adjustable, extremely short channel length. The effective channel length is set by superimposing at least two implantation steps employing differing implantation energy and doses. A gate electrode which possesses vertically etched edges is used as an implantation mask for the source implantation and drain implantation. The process allows a MOS structure having an arbitrarily small effective channel length to be constructed by exploiting the lateral scattering which occurs during the ion implantation without influence by mask tolerances. The process corresponding to the theory of the invention provides the possibility of constructing a DIMOS-similar transistor having typical structural dimensions in the region of 1 .mu.m and less.

REFERENCES:
patent: 4045251 (1977-08-01), Graul et al.
patent: 4173818 (1979-11-01), Bassous et al.
patent: 4190850 (1980-02-01), Tihanyi et al.
patent: 4216029 (1980-06-01), Ohki

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