Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1994-06-24
1996-05-14
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257291, 257618, H01L 31106
Patent
active
055170528
ABSTRACT:
A large area deep-diffused phototransistor having a photosensitive area of at least 1 mm.sup.2, and typically 25 mm.sup.2 or larger includes a light entry layer of a deep-diffused p type semiconductor material; at least one well of an n type semiconductor material that is disposed in contact with the light entry layer so as to form a first p-n junction therebetween; and a respective readout contact comprising a p type semiconductor material that is disposed in the n type well so as to form a second p-n junction. The p type material light entry layer, the n type material well, and the p type material readout contact respectively comprises the collector, base and emitter of the phototransistor. The concentration of the p type dopant in the deep diffused light entry layer has a positive gradient extending from the first p-n junction towards the surface of the light entry layer such that the concentration of the p type dopant is greater the closer the proximity to that surface. The base width of the well is selected such that capacitance of the device is in the range between 0.5 pf/mm.sup.2 and 2 pf/mm.sup.2, whereby the phototransistor provides a desired frequency response up to several GHz.
REFERENCES:
patent: 3769546 (1973-10-01), Pecher et al.
patent: 5021854 (1991-06-01), Huth
V. L. Gelezunas et al., "Uniform Large-Area High-Gain Silicon Avalanche Radiation Detectors From Transmutation Doped Silicon," American Institute of Physics, 1977, pp. 118-120.
Sze, S. M., "Physics of Semiconductor Devices," John Wiley, New York, 1981, pp. 783-787.
Crane Sara W.
General Electric Company
Ingraham Donald S.
Snyder Marvin
LandOfFree
Deep-diffused phototransistor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Deep-diffused phototransistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Deep-diffused phototransistor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1898061