Semiconductor device having a funnel shaped inter-level connecti

Details Semiconductor device having a funnel shaped inter-level connecti Semiconductor device having a funnel shaped inter-level connecti

1990-01-18

1992-02-25

Hille, Rolf

357 54, H01L 2194, H01L 2195

Patent

active

050917684

ABSTRACT:
A semiconductor device has a funnel shaped contact window for providing an inter-level connection between a lower silicon or polysilicon film and an upper metal wiring strip, and the funnel shaped contact window is formed in an inter-level insulating film structure consisting of a lower insulating film of phosphosilicate glass and an upper insulating film of silicon dioxide, since an isotropical etching is firstly applied to the silicon dioxide film and followed by an anisotropical etching to the phosphosilicate glass film by using the same mask layer, the lower portion of the contact window is smaller in cross sectional area than the upper portion, and the funnel shaped contact window thus formed is effective to create a smooth topography of an upper metal wiring strip for preventing from undesirable disconnection.

REFERENCES:
patent: 4502210 (1985-03-01), Okumura et al.
patent: 4613888 (1986-09-01), Mase et al.
patent: 4618878 (1986-10-01), Aoyama et al.
patent: 4692786 (1987-09-01), Lindenfelser
patent: 4710241 (1987-12-01), Komatsu
patent: 4731346 (1988-03-01), Ashwall
patent: 4748492 (1988-05-01), Iwase et al.

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