Semiconductor memory device with a 3-dimensional structure

Details Semiconductor memory device with a 3-dimensional structure Semiconductor memory device with a 3-dimensional structure

1990-12-14

1992-02-25

James, Andrew J.

357 237, 357 49, 357 42, 357 55, 357 71, 357 75, H01L 2978

Patent

active

050917625

ABSTRACT:
A semiconductor memory device comprises a plurality of conductive planar members stacked while being spaced at predetermined distances, a plurality of conductive wires passing through the planar members, and switching elements and capacitance elements. Both types of elements are formed in the vicinity of each of the cross points of the conductive planar members and the wires.

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Muller et al, Device Electronics for IC's, 1986, pp. 450-454.
`New Vertical Stacked Transistor . . . `, IBM Tech., vol. 32, No. 3B, Aug. 89, pp. 177-182.

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